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| Photodiode Preliminary Wavelength Infrared Type Planar 6/21/2007 Technology InGaAs/InP EPD-1300-5-0.2 rev. 06/07 Case 5 mm plastic lens Description 9,15 1 Anode 5,75 - 0,3 0,8 - 0,4 0,6 - 0,2 InGaAs-Photodiode mounted in standard 5 mm package without standoff . High spectral sensitivity in the infrared range (NIR, SWIR). Note: Special packages with standoff available on request 2,54 Applications 1,5 36,5 1,0 O5 Optical communications, safety equipment, light barriers Miscellaneous Parameters Tamb = 25 unless otherwise specified C, Parameter Active area Temperature coefficient Operating temperature range Storage temperature range Test onditions Symbol A TC(ID) Tamb Tstg Value 0.032 7.4 -40 to +85 -40 to +100 Unit mm %/K C C Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Parameter Forward voltage Breakdown voltage 2) Test conditions IF = 10 mA IR = 10 A VR = 0 V VR = 0 V VR = 0 V VR = 5 V VR = 10 mV =1300 nm = 1300 nm VR = 0 V VR = 0 V Ee = 1mW/cm Symbol VF VR 0,5 S ID RSH NEP D* CJ IPh Min Typ 1.7 Max Unit V V 5 800 680 0.9 30 3 5 4.0x10 11 0.95 -15 12 Sensitivity range at 10 % Spectral bandwidth at 50 % Responsivity at 1300 nm1) Dark current Shunt resistance Noise equivalent power Specific detectivity Junction capacitance Photo current at 1300 nm* 1) 2) 1750 nm nm A/W 200 pA G W/ Hz cm Hz W -1 4.5x10 pF A measured on bare chip for information only Note: All measurements carried out with EPIGAP equipment Labeling Type EPD-1300-5-0.2 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Lot N RD (typ.) [G ] Quantity Photodiode Preliminary 6/21/2007 EPD-1300-5-0.2 rev. 06/07 Typical Optical Responsivity (A/W) 1,0 0,8 0,6 0,4 0,2 0,0 400 600 800 1000 1200 1400 1600 1800 Wavelength [nm] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2 |
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